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Influence of hydrogen doping of In2O3-based transparent conducting oxide films on silicon heterojunction solar cells
DC Field | Value | Language |
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dc.contributor.author | Park, HG | - |
dc.contributor.author | Hussain, SQ | - |
dc.contributor.author | Park, J | - |
dc.contributor.author | Yi, J | - |
dc.date.accessioned | 2024-09-27T00:19:40Z | - |
dc.date.available | 2024-09-27T00:19:40Z | - |
dc.date.issued | 2024 | - |
dc.identifier.issn | 0022-2461 | - |
dc.identifier.uri | http://repository.ajou.ac.kr/handle/201003/32789 | - |
dc.description.abstract | We report the influence of hydrogen doping of In2O3-based transparent conducting oxide (TCO) films, including indium tin oxide (ITO), hydrogenated ITO (ITO:H), In2O3 (IO), and hydrogenated In2O3 (IO:H), using radio-frequency magnetron sputtering for SHJ solar cells. The purpose of hydrogen doping is to improve the sheet resistance and work function, while Ar-based ITO films play a critical role in maintaining the electrical and optical properties. The thickness of all TCO films was fixed at 100 nm, which showed the lowest sheet resistance of 34 Ω/sq for the IO:H films. All the films showed an average transmission of more than 87% in the visible-wavelength (400–800 nm) region. The work function was enhanced from 4.96 to 5.45 eV with a hydrogen of 3 sccm. SHJ solar cells using IO:H films achieved an efficiency of 23.6% with an open-circuit voltage (VOC) of 736 mV, a current density (JSC) of 38.83 mA/cm2 and a fill factor (FF) of 82.62%. We performed an improvement in the conversion efficiency of the device with a simulation using the AFORS-HET (automatic for the simulation of heterostructures) program. The efficiency achieved was 25.41% when VOC = 729 mV, JSC = 41.3 mA/cm2, FF = 84.42%. | - |
dc.language.iso | en | - |
dc.title | Influence of hydrogen doping of In2O3-based transparent conducting oxide films on silicon heterojunction solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, HG | - |
dc.type.local | Journal Papers | - |
dc.identifier.doi | 10.1007/s10853-024-09506-7 | - |
dc.citation.title | Journal of materials science | - |
dc.citation.volume | 59 | - |
dc.citation.number | 30 | - |
dc.citation.date | 2024 | - |
dc.citation.startPage | 13873 | - |
dc.citation.endPage | 13882 | - |
dc.identifier.bibliographicCitation | Journal of materials science, 59(30). : 13873-13882, 2024 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.identifier.eissn | 1573-4803 | - |
dc.relation.journalid | J000222461 | - |
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